Crossbar Licenses ReRAM IP to China’s SMIC
Crossbar Inc., a developer of resistive random access memory (ReRAM) technology, will provide China’s leading silicon foundry with blocks of intellectual property to license to customers under the terms of a strategic partnership.
ReRAM vendor inks deal with semi foundry
Crossbar announces a licensing deal with the Chinese Semiconductor Manufacturing International Corporation that will help move the needle on ReRAM.
The Commercialization of 3D Stackable Memory - Part Two: The Opportunities for ReRAM Cells to Take 3D Memory to 8-nm Nodes
Crossbar’s Sundar Narayanan examines the advantages inherent in resistive memory technology over current NAND technology in taking 3D memory on a familiar and reasonable cost curve to 8-nm technology nodes.
The Commercialization of 3D Stackable Memory - Part One: The Challenges of Manufacturing 3D Stackable Memory
Crossbar’s Sundar Narayanan look at the challenges that need to be overcome in manufacturing 3D stackable memory using today’s competing technology approaches.
ReRAM Gains Steam
New memory finds a lucrative niche between other existing memory types as competition grows.
The global next generation memory market that is expected to reach USD 3.43 billion by 2020 scrutinized in new research
Increasing need for fast and economical storage solutions across diverse applications is estimated to drive market growth and Crossbar is identified as a key player.
Crossbar raises $35 million for ReRAM roll out
Resistive RAM startup Crossbar Inc. has announced it has completed a $35 million Series D funding round. This brings the money raised by the company since its foundation in 2010 to $85 million.
Startup raises $35M to challenge flash chip market
Crossbar raised $35 million in Series D funding this week as it ramps up sales of chips it says could disrupt the $60 billion flash memory market. The Santa Clara company, led by co-founder and CEO George Minassian, says it can fit a terabyte of data on a postage stamp-sized chip that is 20 times faster than the best flash memory.
Crossbar named to the EE Times “Silicon 60: 2015's Startups to Watch”
The selection of the 60 companies in the latest Silicon 60 is based on a mix of criteria including: technology, intended market, financial position, investment profile, maturity and executive leadership. They are emerging companies to follow.
3D NAND, MRAM, ReRAM: Emerging opportunities and challenges for the changing memory market
Crossbar Co-founder and chief scientist Wei Lu says the company plans to deliver its ReRAM technology to strategic partners as an IP block for embedded non-volatile memory on logic chips from a leading-edge manufacturing foundry by the end of the year.
Combining memory and storage isn’t a new idea, but there hasn’t yet been a nonvolatile memory technology fast enough to make it practical, says Tsu-Jae King Liu, a professor who studies microelectronics at the University of California, Berkeley. Liu is an advisor to Crossbar, a startup working on a memristor-like memory technology known as resistive RAM.
Intel, Micron & Toshiba tout faster, cheaper flash
The prospect of exponentially larger flash memory is enticing, but that doesn’t mean the technology won’t one day be surpassed. A number of companies are looking to build alternatives to flash, including IBM with its phase change memory (PCM) and a startup called Crossbar that’s hoping to use Resistive RAM (ReRAM) to build chips with up to 1TB of storage.
Storage that's both fast and roomy? It's on the way
Good news for laptop and smartphone buyers: a novel flash-memory design should cut costs and boost capacity.
A day may come when flash memory is USELESS. But today is not that day
However sometime in the 2020s it will be. What then?
Are new non volatile memory technologies about to enter the main stream applications… and change the supply chain?
Yole Development decided to publish the interview from Crossbar to announce their new report “Emerging Non Volatile Memory (NVM) Technology & Market Trends”.
Crossbar to commercialize its ReRAM facilitating terabyte of storage on the size of a postage stamp
Crossbar, the makers of new non-volatile RAM said that their new memory is ready to move from a prototype to a fabrication facility, where 1TB chips the size of a postage stamp. The Silicon Valley start-up expects that its 3D resistive RAM or shortly called as 3D RAM, will be out in early 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that.
Crossbar Demonstrates Breakthrough Resistive ReRAM at IEDM 2014
Start-up company Crossbar announced today at IEEE International Electron Devices Meeting (IEDM) a breakthrough in 3D ReRAM architecture that could allow the development of a 1TB ReRAM memory chips that have the size of a postage stamp. Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation discussed how to overcome a common design challenge in high-density ReRAM development, and described how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in ReRAM memory, another milestone needed to commercialize ReRAM memory for high-density data applications.
Crossbar gets around a nasty obstacle to dense 3D memory chips
Creating 3D memory chips isn’t too hard. But packing the memory cells so they contain a lot of dense storage is a problem that has bedeviled chip makers for a while. But memory chip startup Crossbar says it has figured out a way to create 3D structures with a lot of densely packed circuitry. The result could be memory chips that can store a ton of data in a very small space. Santa Clara, Calif.-based Crossbar disclosed what it called a breakthrough innovation at the 2014 International Electron Devices Meeting in San Francisco today. It will enable high-density storage with faster response times and lower power consumption. As such, it could be useful in everything from data centers to smartphones.
"Sneak Path" Breakthrough Heralds Arrival Of Ultra-High Density Resistive Memory
Contributed Article by Crossbar's Sung Hyun Jo, Ph.D.,
As floating-gate flash memory technologies used in the majority of products on the market today quickly approach the limits of their ability to scale to higher densities, it has become widely recognized that a new non-volatile memory technology is needed to replace them. Resistive random-access memory (ReRAM) is widely hailed as the "most likely to succeed" in the race to replace today's flash memory with a new, more scalable, higher-capacity, higher-performance and more reliable non-volatile memory. While many companies are actively pursuing ReRAM technologies, however, the road to creating commercially viable ReRAM products has not been easy.