Crossbar’s patented built-in select feature allows thousands of Crossbar’s ReRAM cells to be inter-connected in true cross-point memory arrays. This extremely dense memory arrays with the capability to scale below 10nm, storing multiple bits per cell and stacking 3D layers provides a path towards TeraBytes on a single die.
The erase-free architecture with small page granularity that can be re-programmed without a block erase provide impressive performance boost over Flash-based Solid-State solutions. The reduced complexity of the storage controller and reduced number of background memory accesses enable a new era of Solid-State data storage solutions.
The versatility of Crossbar’s ReRAM technology enables different device characteristics and performances depending on the targeted applications. Crossbar is currently working with strategic partners to enable new class of data storage solutions that will leverage the superior characteristics of Crossbar’s 3D ReRAM to the end-user experience level.
- IP Cores
- 3D ReRAM
- ReRAM: The Future Technology for NAND Flash
- Sneak Path Breakthrough
- Overcoming Challenges in 3D Memory Production
- A New Approach to Embedded Memory