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Crossbar Emerges from Stealth-Mode; Unveils Crossbar ReRAM Non-Volatile Memory Technology

Working Array Validates Manufacturability and Simplicity of Crossbar Resistive RAM

  • Highest Capacity: Up to 1 Terabyte (TB) of Storage on a Single Chip; Multiple Terabytes with 3D Stacking
  • Lowest Power: Extends Battery Life to Weeks, Months or Years
  • Highest Performance: 20x Faster Write than NAND
  • Easiest SOC Integration: Simple Stacking on Logic in Standard CMOS at Most Advanced Nodes
  • Most Reliable: 10x the Endurance of NAND; Approaching DRAM Reliability

SANTA CLARA, CA – AUGUST 5, 2013 - Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM ReRAM technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Crossbar today also announced it has developed a working Crossbar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.

Due to its simple three-layer structure, Crossbar technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable logic and memory to be easily integrated onto a single chip at the latest technology node, a capability not possible with other traditional or alternative non-volatile memory technologies.

“Non-volatile memory is ubiquitous today, as the storage technology at the heart of the over a trillion dollar electronics market - from tablets and USB sticks to enterprise storage systems,” said George Minassian, chief executive officer, Crossbar, Inc. “And yet today’s non-volatile memory technologies are running out of steam, hitting significant barriers as they scale to smaller manufacturing processes. With our working Crossbar array, we have achieved all the major technical milestones that prove our ReRAM technology is easy to manufacture and ready for commercialization. It’s a watershed moment for the non-volatile memory industry.”

Crossbar’s technology will deliver 20x faster write performance, 20x lower power consumption, and 10x the endurance at half the die size, compared to today’s best-in-class NAND Flash memory. With that breakthrough performance and reliability, very high capacity and low power consumption, Crossbar will enable a new wave of electronics innovation for consumer, enterprise, mobile, industrial and connected device applications.

Non-volatile memory is the most common storage technology used for both code storage (NOR) and data storage (NAND) in a wide range of electronics applications. According to market research firm Webfeet Research, non-volatile memory is expected to grow to become a $48.4 billion market in 2016. Crossbar plans to bring to market standalone chip solutions, optimized for both code and data storage, used in place of traditional NOR and NAND Flash memory. Crossbar also plans to license its technology to system on a chip (SOC) developers for integration into next-generation SOCs.

Sample of Crossbar Technology Applications:

  • Consumer Electronics, Mobile Phones and Tablets – Stores all of your personal entertainment, data, photos and information in a device that fits in your pocket. Delivers very fast storage, playback, backup and archiving.
  • Enterprise Storage, SSDs and Cloud Computing – Extends SSD reliability and capacity. Improves performance for enterprise, data center and cloud storage systems.
  • The Internet of Things; The Industrial Internet – Delivers years of battery life for industrial and connected applications such as smart meters and thermostats. Wide temperature ranges allow for reliability in the extreme heat of the summer or freezing temperatures in the winter. Enables entirely new, highly integrated SOCs that can be powered with a button cell or energy harvesting from the environment such as solar, heat or simple vibrations.
  • Wearable Computing – Enables a new generation of wearable computing with high capacity storage in a very small, compact size with very low power consumption.
  • Secure Payments – Can permanently store the codes and encryption keys needed for secure applications such as large volume smart cards to high-end mobile processors for contactless payments.

Working Memory Array Underscores Simplicity; Readiness for Commercialization

The Crossbar memory cell is based on three simple layers: A non-metallic bottom electrode, an amorphous silicon switching medium and a metallic top electrode. The resistance switching mechanism is based on the formation of a filament in the switching material when a voltage is applied between the two electrodes. This simple and very scalable memory cell structure enables an entirely new class of ReRAM, which can be easily incorporated into the back end of line of any standard CMOS manufacturing fab.

After completing the technology transfer to Crossbar’s R&D fab and technology analysis and optimization, Crossbar has now successfully developed its demonstration product in a commercial fab. This working silicon is a fully integrated monolithic CMOS controller and memory array chip. The company is currently completing the characterization and optimization of this device and plans to bring its first product to market in the embedded SOC market.

Supporting Quotes:

Sherry Garber, Founding Partner, Convergent Semiconductors

“ReRAM is widely considered the obvious leader in the battle for a next generation memory and Crossbar is the company most advanced, showing a working demo that proves the manufacturability of ReRAM. This is a significant development in the industry, as it provides a clear path to commercialization of a new storage technology, capable of changing the future landscape of electronics innovation.”

Jim Handy, Director, Objective Analysis

“The memory market is looking to new technologies to take over once flash reaches its scaling limit. Crossbar’s impressive progress in the development of a manufacturable ReRAM gives a big boost to this popular alternative memory.”

Michael Yang, Senior Principal Analyst, Memory and Storage, IHS

“Ninety percent of the data we store today was created in the past two years. The creation and instant access of data has become an integral part of the modern experience, continuing to drive dramatic growth for storage for the foreseeable future. However, the current storage medium, planar NAND, is seeing challenges as it reaches the lower lithographies, pushing against physical and engineering limits. The next generation non-volatile memory, such as Crossbar’s ReRAM, would bypass those limits, and provide the performance and capacity necessary to become the replacement memory solution.”

Greg Wong, Founder, President and Principal Analyst, Forward Insights

“For several years now companies have focused on developing a next generation memory technology that will lead to significant improvements in reliability, performance, low power operation and scalability compared to existing non-volatile memories. Forward Insights believes that ReRAM, including Crossbar’s approach, has the potential to succeed NAND flash memory due to its scalability and manufacturability. With the realization of a working demo array, we are excited to see the future impact of this technology on a wide range of applications from mobile and connected devices, to storage and data centers.”

Alan Niebel, Founder and CEO, Webfeet Research

“To date, there has not been a viable 2D or 3D NAND replacement technology. Storage Class Memories like Crossbar’s ReRAM have a chance of capturing this elusive NAND replacement $40+ billion prize. Crossbar’s working ReRAM technology array demonstrates significant commercialization progress. Continuing on this trajectory, they could lead the market with a cost effective crosspoint, multi-layer (8) ReRAM ahead of the 3D NAND or their 3D ReRAM competition.”

Yatin Mundkur, Partner, Artiman Ventures

“We are thrilled to see Crossbar achieve a significant industry milestone and produce its first working array in CMOS production facility. We are one step closer to achieving our goal of commercializing a completely new class of memory using a much simpler cell structure than traditional flash alternatives. Artiman is excited to continue working with Crossbar to revolutionize the memory industry.”

Supporting Resources:

About Crossbar, Inc.

Founded in 2010, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing processes. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 100 unique patents, with 30 already issued, relating to the development, commercialization and manufacturing of ReRAM technology. Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers and Northern Light Venture Capital. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Crossbar Media Contact:

Kimberly Canedo
Tanis Communications
Tel: (408) 295-4309 x104
kimberly.canedo@taniscomm.com


Copyright 2013. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

Crossbar to Present Newly-Unveiled ReRAM Technology at Flash Memory Summit 2013

SANTA CLARA, CA – AUGUST 13, 2013 – Speaking at an industry conference for the first time, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (ReRAM)-based technology, creating a new generation of non-volatile memory. Crossbar’s ReRAM is capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs.


What: ReRAM - New Technologies Track Crossbar’s Nazarian, along with executives and researchers from Sony, Panasonic, SK Hynix, Chuo University and the University of Tokyo, will discuss how ReRAM development continues to surge throughout the memory industry, with record numbers of published papers and patent filings coming from major manufacturers, universities and memory start-ups. Mr. Nazarian will specifically address the limitations of current memory solutions and will provide a technical overview of Crossbar’s ReRAM technology and how it can be used to create high density, high performance and reliable solid state systems. Dave Eggleston, principal at Intuitive Cognition Consulting Group, will moderate the panel.

Who: Hagop Nazarian, vice president of engineering and co-founder, Crossbar, Inc.

When: August 14, 2013 from 3:10 – 4:15 p.m. PST

Where: Santa Clara Convention Center, Santa Clara, CA

About Crossbar, Inc.

Founded in 2010, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing processes. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 100 unique patents, with 30 already issued, relating to the development, commercialization and manufacturing of ReRAM technology. Privately held, Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers and Northern Light Venture Capital. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.

About The Flash Memory Summit

The Flash Memory Summit is the only conference dedicated entirely to flash memory and its applications. The Summit features half-day tutorials, workshops, paper and panel sessions, keynotes, roundtables, special sessions, and exhibits. Subjects include hardware, software, design methods, consumer applications, embedded applications, computer and communications applications, alternative technologies, programming methods, testing, standards, and market research.


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Crossbar Media Contact:

Nicole Conley
Tanis Communications
Tel: (408) 295-4309 x111
nicole.conley@taniscomm.com


Copyright 2013. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

Crossbar Closes Series C Funding of $25M; Oversubscribed Round Validates Company's Readiness to Scale

SANTA CLARA, Calif, March 31, 2014 - Crossbar, Inc., a start-up company pioneering Resistive RAM (ReRAM) technology, today announced it has completed a $25 million Series C funding in an oversubscribed round. Participating in the round were Crossbar’s existing investors Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital and the University of Michigan. In addition, new investors included SAIF Partners, Korea Investment Partners, CBC-Capital and Nick and Joby Pritzker through their family’s firm, Tao Invest, validating the mass-market opportunity and global appeal of the Crossbar technology.

With a simple three-layer structure, Crossbar Resistive RAM (ReRAM) technology can be stacked in 3D, making it possible to store terabytes of data on a single postage-stamp sized chip. Its simplicity, stackability and CMOS compatibility enable logic and memory to be easily integrated onto a single chip at the latest technology node, making it ideal for embedded memory applications as well.

“The response to Crossbar’s ReRAM technology has been truly overwhelming and we are now actively engaged in discussions with some of the leaders in the electronics and semiconductor markets,” said George Minassian, CEO, Crossbar Inc. “Our Crossbar team consists of some of the best and brightest minds in the memory industry and our investors are among the most respected. With this latest round of funding we can further accelerate our market momentum, and more rapidly bring our technology to market.”

Since emerging from stealth-mode in August 2013, Crossbar has continued to execute against its aggressive technology milestones in preparation for the first wave of commercialization of its technology. The company has demonstrated a 1 Megabyte (MB) storage device for embedded code applications, validating Crossbar’s ReRAM technology is ready for production with promising yields and performance measures. The company is finalizing agreements with several leading international semiconductor companies and plans to announce its first licensing agreements with several customers later this year.

Crossbar’s Series C financing closed on March 4, 2014 and brings the total raised to $50 million. The company plans to use the funds to complete manufacturing and licensing operations.

Supporting Quotes:

“In a very short time Crossbar’s team has already overcome some of the most complex technical hurdles to ready a brand new non-volatile memory technology for mass production,” said Tim Wilson, managing director at Artiman Ventures.

“With this new round of funding, they will further accelerate their momentum as they endeavor to forever change the landscape of Flash memory and data storage.”

“The continued success of Crossbar clearly validates the significant potential we saw in the University of Michigan’s early research,” said Wen Hsieh, partner at Kleiner Perkins Caufield & Byers. “From day one, we firmly believed that this technology could deliver transformative performance and storage capacity that would usher in a new generation of mobile, consumer electronics, enterprise storage and industrial applications.”

Supporting Resources:

About Crossbar:

Crossbar Investors:

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubation, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing processes. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 110 unique patents, with 45 already issued, relating to the development, commercialization and manufacturing of ReRAM technology and is backed by some of the world’s leading venture capital firms. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Media Contact:

Kelly Karr
Tanis Communications
Tel: (408) 718-9350
kelly.karr@taniscomm.com


Copyright 2014. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

Crossbar, Inc. Names Ron Richter VP of Sales

  • 20+ Years in Semiconductor Sales with Leading IP and Chip Companies
  • Signals Crossbar’s Accelerating Momentum with First IP Ready for Licensing

SANTA CLARA, CA — June 23, 2014 - Crossbar, Inc., a start-up pioneering Resistive RAM (ReRAM) technology, today announced that semiconductor industry veteran Ron Richter joined the company as vice president of sales. Heading up Crossbar’s new sales organization, Richter will be responsible for driving the company’s global sales strategy and organization as it readies its technology to go to market.

Emerging from stealth-mode just last summer, Crossbar, Inc. is pioneering a new generation of non-volatile memory technology. With its simple three-layer structure, Crossbar technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable easy integration of logic and memory on a single chip at the latest technology node, a capability not possible with other traditional or alternative non-volatile memory technologies.

“Our ability to attract the best and brightest minds in the industry is critical to our continued momentum and growth,” said George Minassian, CEO of Crossbar, Inc. “We continue to see a very positive response to our ReRAM technology and Ron’s track record building IP-based businesses for companies, including Silicon Image and Zoran, will be very valuable as we enter the licensing phase of our go-to-market plan. Ron is a great addition to an exceptional Crossbar team.”

With more than 20 years of extensive semiconductor sales and marketing experience, Richter has a solid track record in helping start-ups and multi-billion dollar organizations rapidly expand both intellectual property and product sales. He comes to Crossbar from Silicon Image where, as senior director of business development, he was responsible for worldwide revenue generation and product planning for intellectual property products. While there, he managed a family of semiconductor IP products including HDMI, which became an international connectivity standard, shipping in more than three billion products. During the late 1990s, Richter worked for Zoran as vice president of sales, where he helped usher in the era of DVD players while also driving IC sales in China. At Adobe Systems, he licensed Postscript technology, which quickly became the industry standard enabling electronic publishing and, eventually, the PDF paperless office. Previously, Richter worked at IBM as a hard disk drive engineer and at Xerox in program management. Richter holds MBA and B.S. degrees in electrical engineering from the University of Southern California. He received sales training at IBM and program management education at Xerox.

“Crossbar is an exceptionally innovative company, executing flawlessly against challenging milestones, ushering in a new era of high performance and very high capacity non-volatile storage,” said Richter. “I am looking forward to contributing to the company’s growing momentum, and placing its ground-breaking technology into the hands of customers.”

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubator, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing processes. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 110 unique patents, with 45 already issued. Crossbar recently completed its Series C round of funding with investments from Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital, the University of Michigan, SAIF Partners, Korea Investment Partners, CBC-Capital and Tao Invest. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Media Contact:

Nicole Conley
Tanis Communications
nicole.conley@taniscomm.com
Tel: (408) 295-4309 ext. 104

Crossbar Unveils Major Technical Innovation Behind Terabyte Storage-on-a-Chip

1TnR Selectivity Enables Super-Dense Non-Volatile Memory Arrays - One Transistor for Many Memory Cells

  • Patented feature proven in working silicon
  • Technical breakthrough unleashes long-term memory density scalability
  • Industry’s first solid state technology to overcome selectivity barrier
  • Enables very high capacity solid state enterprise storage using 1TnR implementation

SANTA CLARA, California, June 30, 2014 - Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM), today disclosed further details behind its revolutionary non-volatile ReRAM technology. The company announced it has demonstrated pre-production 1MB arrays using its patented “1TnR” (1 Transistor driving n Resistive memory cells) selectivity for read/write operations, representing a critical milestone toward commercializing terabyte scale memory arrays on a postage stamp size chip.

1TnR makes it possible for a single transistor to manage a very large number of interconnected memory cells, enabling very high capacity solid-state storage. Other memories utilizing passive cross-point architectures, such as Resistive RAM, PCM (Phase Change Memory) and neuromorphic systems, experience unintended electrical current when accessing high density storage due to a phenomenon called “sneak path current”. Until now, these memories have not been able to access data and have consumed excessive power, making dense memory configurations impractical. For the past decade, many of the world’s experts have attempted to solve this issue, but with limited success. Crossbar is the first company to deliver a solution to this industry-wide problem by enabling a single transistor to drive over 2,000 memory cells with very low power, producing super-dense Crossbar ReRAM semiconductor memories.

“Crossbar has once again broken through traditional boundaries with its innovative and patented 3D ReRAM technology,” said George Minassian, CEO, Crossbar Inc. “With 1TnR, companies will realize the dream of extremely dense, highly reliable, and high performance solid state storage. It’s truly ground breaking and has the potential to redefine what’s possible in enterprise storage and high-capacity non-volatile SoC memories.”

According to IBM1, 2.5 Exabytes - or 2.5 billion Gigabytes (GB) - of data was generated every day in 2012. All of this data needs to be stored and accessed quickly, at low power, and in a very compact space. Enterprises and service providers struggle with managing today’s storage systems using aging disk-drive technologies. Storage systems must be re-architected using solid-state storage technologies. Hybrid, or all Flash, storage solutions are gaining momentum, but the majority of the enterprise storage market still relies on disk drive technologies as a core part of their architectures, for cost, available capacities and reliability concerns.

The true transformation to next generation high capacity storage systems will require a revolutionary new approach to solid-state storage devices and their interconnected processors. This transformation will enable hundreds of terabytes, in a small form factor, to be accessed at high speed, high throughput and high IOPS (input/output operations per second), while consuming less power at lower cost. Many of these technical challenges have been overcome by Crossbar’s 3D ReRAM technology, including:

  • Cell physics – Traditional Flash memory materials wear out quickly after being accessed and rewritten too many times, leading to degrading performance, unrecoverable data loss and limited lifetime. ReRAM solutions do not suffer similar wear-out issues due to the technology’s fundamental memory cell structure, based on metallic nano-filament in a non-conductive layer;
  • Economics – Semiconductor manufacturing facilities for advanced NAND Flash require multi-billion dollar investments. Crossbar’s ReRAM can be stacked in 3D directly on top of standard CMOS wafers, making it very cost effective to manufacture;
  • Super dense memory array architecture – The 1TnR selectivity feature, invented and patented by Crossbar, solves the fundamental problem of scalable high-capacity storage.

Crossbar’s latest 1TnR ReRAM technology is built upon the foundation of its one transistor per memory cell technology that has been validated in silicon using the company’s 1 Megabyte (MB) storage device for embedded code applications. This device features very low latency and very fast read performance, as required for code applications. Its simplicity, superior capabilities and CMOS compatibility enable logic and memory to be easily and cost-effectively integrated onto a single chip, at the latest technology node, on standard manufacturing processes. Together, the company’s 1TnR technology, ideal for high-capacity 3D ReRAM data storage applications, and 1T1R technology for embedded code applications, forms the basis for the company’s IP licensing and standalone product line roadmap.

Crossbar is currently finalizing agreements with several leading global semiconductor companies and plans to announce its first licensing agreements with customers shortly. The company intends to present further technical details of its 1TnR technology at upcoming conferences.

Supporting Resources:

Supporting Quotes:

“Scaling to a Terabyte on a chip requires a brand new approach to creating a super dense memory array, which has been a stumbling block for large scale non-volatile memory,” said Alan Niebel, founder and CEO of Webfeet Research. “With Crossbar’s 1TnR innovation, we may see a future where non-volatile memory can realistically achieve cost effective and high yields without 32 or more monolithically connected layers, possibly replacing disk drives for all but archival storage.”

“Crossbar’s ReRAM approach covers both spectrums of the market with its 1TnR technology,” said James Bagley, senior analyst of SSG-NOW. “While its proven 1T1R technology targets the embedded code applications, its ability to demonstrate 1TnR directly impacts the high-capacity 3D ReRAM data storage applications. Crossbar is well on its way to redefining what is technologically possible in the enterprise storage market.”

“The memory technology that replaces NAND flash must have a compelling cost structure, and this means that everything will have to shrink beyond NAND’s limits: not only the bit cell, but also the select mechanism,” said Jim Handy, principal analyst at Objective Analysis. “Crossbar’s 1TnR technology is a good candidate in this regard, with its ability to share a single select transistor among a number of memory bits.”

“The potential for non-volatile memory in the enterprise is huge, and companies continue to innovate in order to overcome the shortcomings of current technologies,” said Randy Kerns, senior strategist and analyst at the Evaluator Group. “Crossbar’s ReRAM is a new approach to address the issues. This technology allows enterprise storage to have hundreds of terabytes in a single system, built completely on non-volatile memory.”

“Crossbar’s continued progress is another validation that its ReRAM solution will be the winning next generation memory technology,” said Sherry Garber, founding partner of Convergent Semiconductors. “The technical achievement outlined in 1TnR is truly remarkable and provides the most viable path to achieving extremely high density, highly reliable, and high performance solid state storage.”

“The advancement and growth of non-volatile memory depends upon the continued development of new technologies,” said Tom Coughlin, president of Coughlin Associates. “Crossbar has contributed significantly to the advance of resistive memory technology with its development of 1TnR in working silicon samples.”

“Crossbar ReRAM technology seems very promising in terms of scalability, endurance, power consumption and especially manufacturing cost,” said Yann de Charentenay, senior analyst, MEMS Devices & Technologies at Yole Développement (Yole). In Yole’s report, entitled “Emerging Non-Volatile Memory” (Released in Feb. 2013), the company was expecting that ReRAM technology would be the best candidate for NAND replacement in mass storage applications. “Since this technology and market analysis has been published, ReRAM technology has made significant progress in term of scalability/chip density. We are excited to see the first Crossbar ReRAM samples,” he added.

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubation, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing tools, processes and infrastructure. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 125 unique patents, with 50 already issued. Crossbar recently completed its Series C financing round of funding with investments from Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital, the University of Michigan, SAIF Partners, Korea Investment Partners, CBC-Capital and Tao Invest. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Media Contact:

Nicole Conley
Tanis Communications
Tel: (408) 295-4309 x104
nicole.conley@taniscomm.com


Copyright 2014. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

Crossbar to Demonstrate Breakthrough Resistive ReRAM Innovation at IEDM 2014

Unveils Major Technical Milestone in the Development of Ultra-High Density Non-Volatile Memory Solutions

SANTA CLARA, CA – December 8, 2014 - Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (ReRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its ReRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using Crossbar’s patented “1TnR” technology for read/write operations in June 2014.

Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation will discuss how to overcome a common design challenge in high-density ReRAM development, and will describe how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in ReRAM memory, another significant milestone needed to commercialize ReRAM memory for high-density data applications.

Presentation Title: 3D-stackable Crossbar Resistive Memory Based on Field Assisted Superlinear Threshold (FAST) Selector

Speaker: Sung Hyun Jo, Ph.D., Crossbar Senior Fellow, Technology Development

When: Monday, December 15th at 4:05 pm

Track: Session 6: Memory Technology – Resistive RAM

Where: IEDM Conference in the Hilton San Francisco Union Square, San Francisco, CA

Location: Continental Ballroom 6

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubation, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing tools, processes and infrastructure. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 152 unique patents, with 62 already issued. Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital, the University of Michigan, SAIF Partners, Korea Investment Partners, CBC-Capital and Tao Invest. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.

Crossbar Unveils Another Breakthrough Innovation Behind its Ultra-High Density 3D ReRAM Solutions at IEDM 2014

Demonstrates Industry’s First Patented Field Assisted Superlinear Threshold Selector Device to Overcome Sneak Path Current Problem in 3D Crosspoint ReRAM Arrays

  • Enables very high-density storage solutions with faster response time and lower power consumption
  • Solves one of the greatest technical challenges faced by developers of high-density ReRAM
  • Proven in silicon; signals Crossbar’s 3D ReRAM readiness for commercialization of Terabyte storage-on-a-chip

SANTA CLARA, California, December 15, 2014 - Achieving another major milestone needed to bring terabyte storage-on-a-chip to market, Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM) non-volatile technology, today disclosed it has solved one of the greatest challenges facing developers in achieving ultra-high density ReRAM. In a technical presentation at today’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, the company unveiled its approach to suppressing the sneak path current that interferes with reliable reading of data from individual memory cells, one of the most challenging hurdles ReRAM developers are currently facing. Without the ability to suppress this sneak path current, ReRAM developers are unable to deliver the high-density 3D memories arrays needed to make terabyte storage-on-a-chip possible.

“When we unveiled Crossbar ReRAM eighteen months ago, we laid out aggressive plans to deliver a new generation of memory capable of scaling to 1 terabyte (TB) on a chip the size of a postage stamp,” said George Minassian, CEO, Crossbar Inc. “Crossbar continues to overcome the major technical hurdles that have, in the past, kept others from bringing ReRAM to market. With this latest achievement, we are one step closer to commercialization, enabling the implementation of ReRAM technology in commercial products; a ground breaking achievement that will redefine what is possible with enterprise storage and high-capacity non-volatile SoC memories.”

Today’s announcement follows Crossbar’s previous technology disclosure of its patented 1TnR (1 Transistor driving n Resistive memory cell) selectivity making it possible for a single transistor to manage a very large number of interconnected memory cells, which enables very high capacity solid-state storage. While 1TnR enables a single transistor to drive over 2,000 memory cells with very low power, it also experiences leakage of a sneak path current that interferes with the performance and reliability of a typical ReRAM array. Crossbar’s patented field assisted superlinear threshold selector device solves that leakage problem by utilizing a super linear threshold layer, in which a volatile conduction path is formed at the threshold voltage. This field assisted superlinear threshold device is the industry’s first selector capable of suppressing the leakage current below 0.1nA and has been successfully demonstrated in a 4 Mbit integrated 3D stackable passive Crossbar array.

“Without an effective way to suppress the sneak path current, high-density 3D ReRAM has been technically unachievable,” said Alan Niebel, founder and CEO of Webfeet Research. “Crossbar’s selector is the first solution to overcome this design challenge, paving the way for terabyte storage-on-a-chip to become a reality and positioning ReRAM as the leading next generation NAND memory replacement.”

About the Field Assisted Superlinear Threshold Selector Device

Demonstrated at IEDM, Crossbar’s selector solves the sneak path problem by achieving the highest reported selectivity of 1010, as well as an extremely sharp turn-on slope of less than 5mV/dec, fast turn-on and recovery (<50ns), an endurance greater than 100M cycles, and a processing temperature less than 300°C, all ensuring commercial viability. The company was able to achieve this by developing a patent-protected special architecture in the Crossbar ReRAM cells, putting them into a low-voltage state before certain thresholds, enabling a single transistor to drive over 2,000 memory cells with very low power.

Measurements on a 4Mb crossbar array with integrated patented field assisted superlinear threshold selectors show the sneak current suppressed to below 0.1nA, while maintaining a 102 memory on/off ratio and greater than 106 selectivity during cycling, making it ideal for ultra-high density memory applications. The high selectivity of the patented field assisted superlinear threshold device, and its ability to be integrated directly into each ReRAM memory cell, make it possible to move beyond the density limitations of 1T1R array structures. Crossbar’s solution allows for implementation in commercial memory products, and is based on a 3D stackable 1TnR memory architecture, for ultra-high density non-volatile memory application.

“When Crossbar first emerged from stealth-mode, there was no question that flash memory was running out of steam and the industry had set its sights on ReRAM as the next generation technology with the most promise for high density non-volatile memory,” said Greg Wong, founder, president and principal analyst, Forward Insights. “Since then, the company has achieved major technical advances and with this announcement, we now have silicon proof of Crossbar ReRAM technology and can see a potential path towards the commercialization of a next generation storage technology.”

The Next Generation of Non-Volatile Memory

Widely touted as the most promising alternative to traditional non-volatile memory, Crossbar ReRAM’s simplicity, stackability and CMOS compatibility enable logic and memory to be easily integrated onto a single chip at the latest technology node, a capability not possible with other traditional or alternative non-volatile memory technologies. With 16x the density compared to existing memory solutions, Crossbar enables unprecedented data storage and retrieval in a minimal footprint and with minimal cost. Delivering 10x better endurance than current NAND solutions, Crossbar ReRAM will also extend the life of SSDs and other non-volatile devices.

Crossbar continues to hit all the major milestones necessary to bring this new generation of non-volatile memory to market. The company emerged from stealth mode in August 2013 with a working memory array at a commercial fab, and announced in June 2014 pre-production 1MB arrays using patented “1TnR” selectivity for read/write operations. Today’s announcement represents yet another critical technical achievement, bringing Crossbar ReRAM one step closer to commercialization, and fulfilling its promise to deliver a new generation of extremely dense, highly reliable and high performance solid-state storage.

Supporting Resources:

About Crossbar, Inc.

Founded in 2010 as a Kleiner Perkins Caufield & Byers incubation, Crossbar, a start-up based in Santa Clara, California, is the inventor of a new class of non-volatile ReRAM memory technology. Designed to usher in a new era of electronics innovation, Crossbar will deliver up to a terabyte (TB) of storage on a single-chip the size of a postage stamp, with very low power, very high performance and compatibility with standard CMOS semiconductor manufacturing tools, processes and infrastructure. As the exclusive holder of resistive RAM (ReRAM) patents from the University of Michigan, Crossbar has filed 156 unique patents, with 71 already issued. Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital, the University of Michigan, SAIF Partners, Korea Investment Partners, CBC-Capital and Tao Invest. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Media Contact:

Nicole Conley
Tanis Communications
Tel: (650) 422-3156
nicole.conley@taniscomm.com


Copyright 2014. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

Crossbar Closes Series D Funding of $35 Million

  • Latest Round Brings Total Amount Raised to $85 Million
  • Funds to Support Continued Ramp to Commercialization

SANTA CLARA, Calif, September 14, 2015 - Crossbar, Inc., the Resistive RAM (ReRAM) technology leader, today announced it has completed a $35 million Series D funding round. Tyche Partners, Oriza Holdings and Cheerful Link joined all of Crossbar’s existing investors in the round, bringing total investment to $85 million to date. Crossbar plans to use the funds to continue the commercial ramp of its game-changing non-volatile (NVM) memory technology.

“The future of electronics innovation rests largely on new developments in memory technology,” said George Minassian, CEO and Co-Founder, Crossbar Inc. “Crossbar ReRAM has been enthusiastically embraced as the leading contender to replace aging non-volatile memory due to its manufacturability and scalability for a broad variety of applications. This latest round of funding will enable us to take the next crucial steps in bringing our technology to market.”

Crossbar’s innovative ReRAM technology is based on a simple device structure using CMOS friendly materials and standard manufacturing processes. It can be stacked in 3D, making it possible to combine logic and memory onto a single chip at the latest technology node. Crossbar ReRAM’s low power, small size, high performance and low latency make it an ideal memory solution for a wide assortment of applications, from very small devices such as wearables and connected devices for the Internet of Things (IoT), to very high capacity, very fast SSDs in cloud data centers.

Crossbar emerged from stealth-mode in August 2013 and has continued to successfully execute its aggressive technology development plan. Crossbar is currently working with beta customers for its embedded memory solution, targeted for production in 2016. The company also continues to achieve important technical milestones to bring to market its very high capacity standalone memory - enabling a terabyte of data to be stored on a chip the size of a postage stamp.

Crossbar’s Series D financing closed on August 26th, 2015, led by new investor, Tyche Partners. Other investors included Artiman Ventures, CBC-Capital, Cheerful Link Ventures, Correlation Ventures, Kleiner Perkins Caufield & Byers, Korea Investment Partners, Northern Light Venture Capital, Oriza Holdings, SAIF Partners, Tao Invest and the University of Michigan.

In conjunction with the latest round of funding, Tyche Partners Founder and Managing Partner Weijie Yun has been named to the Crossbar board of directors.

Supporting Quotes

“The storage market faces a tipping point in the next five years and is ripe for a disruptive, yet proven, technology such as Crossbar ReRAM,” said Weijie Yun, Founder and Managing Partner of Tyche Partners. “This new round of funding will bring Crossbar one step closer to enabling a new world of storage that promises to change how consumers live, work and play.”

“Crossbar’s rapid march toward commercialization and embrace by major customers and foundries clearly demonstrates the promise of their technology and team,” said Wen Hsieh, General Partner at Kleiner Perkins Caufield & Byers. “By inventing a new class of low-latency, high-density and low-cost ReRAM storage solutions that can be manufactured by any semiconductor foundry, Crossbar is enabling a revolutionary transformation of the global memory industry.”

Supporting Resources

About Crossbar

Crossbar Investors

About Crossbar, Inc.

Crossbar Inc. is the leader in ReRAM technology, widely accepted as the front-runner to replace traditional Flash technology in future storage systems. Delivering terabyte storage on a postage stamp-sized chip, with power low enough for massive adoption throughout the Internet of Things, Crossbar ReRAM is easy to tailor for a broad range of applications. From embedded memory on SOCs for wearables, to very high density SSDs for cloud data centers, Crossbar is ushering in a new era of storage innovation. For more information, visit www.crossbar-inc.com or follow us on Twitter, Linkedin and Google+.


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Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
Nicole.conley@taniscomm.com


Copyright 2015. All rights reserved. Crossbar, Inc., the Crossbar logo, and certain other Crossbar trademarks and logos are trademarks and/or registered trademarks of Crossbar, Inc.

SMIC and ReRAM Leader Crossbar Announce Strategic Partnership Agreement

SHANGHAI, March 11, 2016 /PRNewswire/ - Semiconductor Manufacturing International Corporation (“SMIC”, NYSE: SMI; SEHK: 981), China’s largest and most advanced semiconductor foundry and one of the world’s largest foundries, and Crossbar, Inc., the ReRAM (Resistive Random Access Memory) technology leader, jointly announced today that they had signed a strategic partnership agreement on non-volatile ReRAM development and production.

As part of the partnership, SMIC and Crossbar have signed an agreement to provide ReRAM blocks based on SMIC’ 40nm CMOS manufacturing process. This will enable customers to integrate low latency, very high performance and low power embedded ReRAM memory blocks into MCUs and SoCs, targeting the Internet of Things, wearable and tablet computers, consumer, industrial and automotive electronics markets.

“Crossbar continues to execute on schedule, and is now entering the licensing phase. We are honored to announce the collaboration with SMIC as a major stepping stone towards the commercialization of our ReRAM technology,” said George Minassian, CEO and co-founder of Crossbar. “Designers of highly integrated MCUs and SoCs need non-volatile memory technologies that are easy to integrate into their products and can be manufactured using standard CMOS logic processes. Crossbar ReRAM technology and SMIC manufacturing expertise are creating a new era of unique memory architectures with tighter security, lower power consumption while providing more capacity and fast access time.”

Crossbar ReRAM’s CMOS compatibility and scalability to small process geometries enables the integration of non-volatile memory blocks at the same process nodes of MCUs and SoCs. ReRAM cells are integrated in standard CMOS processes between two metal lines of standard CMOS wafers. This enables extremely integrated solutions with on-chip non-volatile memory, processing cores, analog and RF combined on a single die.

“Based on SMIC’s 40nm process node, we can offer high-capacity and low-power memory technology with unique security features for smartcards and various IoT devices to customers,” said Dr. Tzu-Yin Chiu, Chief Executive Officer and Executive Director of SMIC. “We’re delighted to have Crossbar as a new partner in our stable and reliable 40nm technology platform. We are able to support global customers with competitive technology and help them shorten time to market. We’ll continue to attach great importance to long-term strategic cooperation with more world-leading companies to better serve the market and achieve win-win situation in the future.”

Crossbar’s ReRAM provides a cost-effective integrated memory solution for embedded applications requiring low power, high performance non-volatile code execution and data storage.

About Crossbar, Inc.

Crossbar Inc. is the leader in ReRAM technology, widely accepted as the front-runner to replace traditional Flash technology in future storage systems. Delivering terabyte storage on a postage stamp-sized chip, with power low enough for massive adoption throughout the Internet of Things, Crossbar ReRAM is easy to tailor for a broad range of applications. From embedded memory on SOCs for wearables, to very high density SSDs for cloud data centers, Crossbar is ushering in a new era of storage innovation. For more information, visit www.crossbar-inc.com.

About SMIC

Semiconductor Manufacturing International Corporation (“SMIC”) (NYSE: SMI; SEHK: 981) is one of the leading semiconductor foundries in the world and the largest and most advanced foundry in mainland China. SMIC provides integrated circuit (IC) foundry and technology services at 0.35-micron to 28-nanometer. Headquartered in Shanghai, China, SMIC has a 300mm wafer fabrication facility (fab) and a 200mm mega-fab in Shanghai; a 300mm mega-fab and a second majority owned 300mm fab under development for advance nodes in Beijing; and 200mm fabs in Tianjin and Shenzhen. SMIC also has marketing and customer service offices in the U.S., Europe, Japan, and Taiwan, and a representative office in Hong Kong. For more information, please visit www.smics.com.

Safe Harbor Statements

(Under the Private Securities Litigation Reform Act of 1995)

This document contains, in addition to historical information, “forward-looking statements” within the meaning of the “safe harbor” provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements are based on SMIC’s current assumptions, expectations and projections about future events. SMIC uses words like “believe,” “anticipate,” “intend,” “estimate,” “expect,” “project” and similar expressions to identify forward looking statements, although not all forward-looking statements contain these words. These forward-looking statements are necessarily estimates reflecting the best judgment of SMIC’s senior management and involve significant risks, both known and unknown, uncertainties and other factors that may cause SMIC’s actual performance, financial condition or results of operations to be materially different from those suggested by the forward-looking statements including, among others, risks associated with cyclicality and market conditions in the semiconductor industry, intense competition, timely wafer acceptance by SMIC’s customers, timely introduction of new technologies, SMIC’s ability to ramp new products into volume, supply and demand for semiconductor foundry services, industry overcapacity, shortages in equipment, components and raw materials, availability of manufacturing capacity, financial stability in end markets and intensive intellectual property litigation in high tech industry.

In addition to the information contained in this document, you should also consider the information contained in our other filings with the SEC, including our annual report on Form 20-F filed with the SEC on April 28, 2015, especially in the “Risk Factors” section and such other documents that we may file with the SEC or SEHK from time to time, including on Form 6-K. Other unknown or unpredictable factors also could have material adverse effects on our future results, performance or achievements. In light of these risks, uncertainties, assumptions and factors, the forward-looking events discussed in this document may not occur. You are cautioned not to place undue reliance on these forward-looking statements, which speak only as of the date stated or, if no date is stated, as of the date of this document.

Media Contacts:

Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley
Tel: +1 650-422-3156
Email: Nicole.conley@taniscomm.com


SMIC Media Contact:

Jane Tang
Tel: +86-21-3861-0000 x10088
Email: Jane_Tang@smics.com

ReRAM Leader Crossbar Enters China Memory Market

  • Co-founded by Chinese Scientist
  • Backed by Chinese Investors
  • Opens Shanghai Office

BEIJING, CHINA – March 22, 2016 - Crossbar, Inc., the Resistive RAM (ReRAM) technology leader, today announced entry into the China market and the opening of a new office in Shanghai, China.

“China is the fastest growing market for electronics and where the majority of products are manufactured. Our extensive China VC backing and roots, new local presence and leading technology will enable the next wave of electronics innovation in China for consumer, enterprise, mobile, industrial and IoT markets,” said George Minassian, chief executive officer, Crossbar, Inc. “Our recently announced partnership with SMIC will enable the creation of new applications to take advantage of our embedded technology on SMIC’s 40nm process and beyond.”

Crossbar customers are designing low energy and high security solutions by integrating larger on-chip non-volatile resistive RAM (ReRAM) memories into smart cards, set-top boxes, IP cameras and surveillance applications.

Minassian added, “The IoT and wearables markets require energy-efficient, secure and low-cost microcontrollers. Crossbar’s ReRAM technology is an ideal solution to address these requirements by providing embedded memory blocks for program and data storage on chip or as stand-alone EEPROM memory.”

Crossbar’s technology was first developed by China-native Prof. Wei D. Lu’s team. Prof. Lu is the chief scientist and co-founder of Crossbar. He has a Bachelor of Science in Physics from Tsinghua University in China, a Ph.D. in Physics from Rice University in Texas. He spent 12 years studying ReRAM first as a postdoctoral research fellow at Harvard University then as a professor at University of Michigan. He is a leading expert in nanostructures and devices including high-density memory and logic systems based on two-terminal resistive switching devices, neuromorphic circuits, semiconductor nanowire devices, and electrical transport in low-dimensional systems.

Crossbar’s ReRAM is widely accepted as the most likely contender to replace the current generation of non-volatile memory technologies, a $60 billion global market. Capable of storing multiple terabytes (TB) of data on a single 200mm2 chip, Crossbar’s technology enables massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Due to its simple three-layer structure, stackability and CMOS compatibility Crossbar enables logic and memory to be easily integrated onto a single chip at the latest technology node, a capability not possible with other traditional or alternative non-volatile memory technologies. The company’s high capacity and very fast performance makes it ideal for next generation enterprise and data center storage systems as well.

About ReRAM

ReRAM provides low latency, very high performance and low power embedded ReRAM blocks into MCUs, SoCs and FPGAs, targeting the low power and secure Internet of Things, wearable and tablet computers, consumer, industrial and automotive electronics markets. Crossbar’s technology is capable of achieving extremely dense storage solutions, including:

  • Terabytes on a single chip
  • >40X denser than DRAM, with the highest performance and reliability
  • 100X faster read
  • 1000X faster write than NAND
  • 1000X the endurance of NAND
  • High temperature for data centers and mobile devices

Sample of Crossbar Technology Applications:

  • Consumer Electronics, Mobile Phones and Tablets – Stores all of your personal entertainment, data, photos and information in a device that fits in your pocket. Delivers very fast storage, playback, backup and archiving.
  • Enterprise Storage, SSDs and Cloud Computing – Extends SSD reliability and capacity. Improves performance for enterprise, data center and cloud storage systems.
  • The Internet of Things; The Industrial Internet – Delivers years of battery life for industrial and connected applications such as smart meters and thermostats. Wide temperature ranges allow for reliability in the extreme heat of the summer or freezing temperatures in the winter. Enables entirely new, highly integrated SOCs that can be powered with a button cell or energy harvesting from the environment such as solar, heat or simple vibrations.
  • Wearable Computing – Enables a new generation of wearable computing with high capacity storage in a very compact size with very low power consumption.
  • Secure Payments – Can permanently store the codes and encryption keys needed for secure applications such as large volume smart cards to high-end mobile processors for contactless payments.

Global investors in Crossbar include Artiman, Correlation Ventures, Kleiner Perkins Caufield & Byers, Tyche Partners, TAO Capital Partners, University of Michigan, and China-based CBC, Oriza Holdings, Northern Light Venture Capital, SAIF Partners, Korea Investment Partners Co., Ltd.

Resources:

About Crossbar, Inc.

Crossbar Inc. is the leader in ReRAM technology, widely accepted as the front-runner to replace traditional Flash technology in future storage systems. Delivering terabyte storage on a postage stamp-sized chip, with power low enough for massive adoption throughout the Internet of Things, Crossbar ReRAM is easy to tailor for a broad range of applications. From embedded memory on SOCs for wearables, to very high density SSDs for cloud data centers, Crossbar is ushering in a new era of storage innovation. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Amy McDowell
Tel: +1 650-422-3716
Email: Amy.mcdowell@taniscomm.com

Crossbar to Present on System Benefits of 3D ReRAM in Hyperconverged Infrastructure at ARM TechCon

SANTA CLARA, Calif., Oct. 12, 2016 - Crossbar, Inc., the ReRAM technology leader, announced today that Vice President of Strategic Marketing and Business Development Sylvain Dubois will present at ARM TechCon 2016 at the Santa Clara Convention Center in Santa Clara, CA.


Who: Sylvain Dubois, vice president of strategic marketing at business development at Crossbar

What: Dubois’ technical presentation will share an enterprise data center use-case detailing how to design an ARM-based hyperconverged architecture with ReRAM-based storage solutions delivering the right balance between compute and storage. The session title is “A Hyperconverged Infrastructure Virtualization Use Case Delivering 1G IOPs per Server.”

When: Thursday, October 27, 11:30 a.m.

Where: ARM TechCon, Santa Clara Convention Center

About Crossbar, Inc.

Crossbar Inc. is the leader in ReRAM technology, widely accepted as the front-runner to replace traditional Flash technology in future storage systems. Delivering terabyte storage on a postage stamp- sized chip, with power low enough for massive adoption throughout the Internet of Things, Crossbar ReRAM is easy to tailor for a broad range of applications. From embedded memory on SOCs for wearables, to very high density SSDs for cloud data centers, Crossbar is ushering in a new era of storage innovation. For more information, visit crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
Nicole.conley@taniscomm.com

Crossbar CEO George Minassian Presents New Class of Non-Volatile Memory at GSA Memory+ Conference

Discusses ReRAM Breakthroughs for ReThinking Electronics Systems

SHANGHAI, China – June 8, 2017 - Crossbar CEO George Minassian recently spoke at the Global Semiconductor Association (GSA) Memory+ Conference in Shanghai and unveiled how visionary innovators can rethink the traditional constraints of electronics system design and usher in the next era of the user experience in digital societal transformation - from artificial intelligence, machine learning and neural networks, to distributed data centers, device-less mobile computing, and more.

“In the new, coming age of artificial intelligence, neural networks and machine learning, data will be the new “air”, ubiquitously available wherever, whenever it is needed in real-time”, said Minassian. “Any latency introduced by cloud-based storage and retrieval of data will literally suffocate the systems and businesses that will rely on the instant access to that data to perform, survive and thrive.”

Minassian presented the future of data access with ReRAM, including some key takeaways:

  • As an industry, we will move from the current focus on finding, mining and monetizing the data stored in centralized cloud data centers, to a new world where tiny but high capacity, distributed data centers will be scattered throughout our physical environment.
  • Data will move automatically and freely between these data pockets and the cloud, with machines learning what is needed and where, and automatically ensuring the right data is in the right place at the exact time it’s needed.
  • The old computing paradigm whereby massively parallel CPUs sit on one side of a bus, and banks of commodity DRAM or 3D NAND Flash subsystems sit on the other side of the bus will no longer be practical.
  • With ReRAM-enabled SoCs or standalone devices, enterprise storage can be faster, denser, and ultra-low latency. Internet of Things SoCs designed to sense, store and share information can last years on a single battery charge while being smarter, and rethinking the use of NAND-based off-chip subsystems.

View the presentation here.

Resources

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com

Crossbar to Showcase ReRAM in Action at Flash Memory Summit

Santa Clara, CA – August 1, 2017 - Crossbar Inc., the ReRAM technology leader, will present views on the current state of ReRAM technology and targeted applications for both embedded and stand-alone non-volatile memory products. Starting its commercialization phase, Crossbar, Inc. will demonstrate several ReRAM chips and development tools for high-capacity low-latency storage solutions at the Flash Memory Summit in Santa Clara, CA on August 8-10. Technical demos with ReRAM products showing massive battery energy savings for IoT and wearables applications, and outstanding performance on data center server application will be showcased at Crossbar’s booth #219.

Crossbar executives will speak on the following panels:


Who: Hagop Nazarian, Vice-President of Engineering and Co-founder of Crossbar

What: RRAM Panel, Session Number 203-A, RRAM

When: Wednesday, August 9, 3:20 – 4:25 pm


Who: Sylvain Dubois, Vice-President of Business Development & Marketing of Crossbar

What: Life Beyond Flash: New Non-Volatile Memory Technologies Panel, Session Number 301-A, Life Beyond Flash: New Non-Volatile Memory Technologies

When: Thursday, August 10, 8:30 – 9:35 am

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com

IEEE Spectrum Ranks Crossbar Among Top 20 Companies in Patent Innovations

Santa Clara, CA - August 3, 2017 - Crossbar Inc., the ReRAM technology leader, today announced that the company ranked at the top of the Patent Power 2016 Scorecard for the Semiconductor Manufacturing Industry. Crossbar ranked 20th, among peers such as HP, Xerox and Lenovo. The annual ranking was published in the IEEE Spectrum, a publication of the Institute of Electrical and Electronics Engineers that reaches more than 400,000 professionals in areas of technology, engineering and science.

“Only a handful of privately held companies made the list, and we are proud that Crossbar ranked among the top companies in the world,” said Crossbar CEO George Minassian. “Making the IEEE’s Patent Power Scorecard list is a strong validation of Crossbar’s ReRAM technology and our patent portfolio. Crossbar is helping companies rethink storage innovation with its unique ReRAM memory technology that is playing an important role in storage and the next era of the user experience across artificial intelligence, machine learning and neural networks, IoT, wearables, distributed data centers and device-less mobile computing.”

The Patent Power scorecards are based on objective, quantitative benchmarking of the patent portfolios of more than 6,500 leading commercial enterprises, academic institutions, nonprofit organizations and government agencies worldwide. This benchmarking—carried out by 1790 Analytics, based in Haddonfield, N.J.—takes into account not only the size of organizations’ patent portfolios but also their quality, as reflected in characteristics such as growth, impact, originality, and general applicability.

For more information on IEEE’s Patent Power Scorecard visit http://spectrum.ieee.org/static/interactive-patent-power-2016.

Check out Crossbar @ FMS 2017

Starting its commercialization phase, Crossbar, Inc. will demonstrate several ReRAM chips and development tools for high-capacity low-latency storage solutions at the Flash Memory Summit in Santa Clara, CA on August 8-10. Technical demos with ReRAM products showing massive battery energy savings for IoT and wearables applications and outstanding performance on data center server applications will be showcased at Crossbar’s booth #219.

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com

Crossbar to Showcase ReRAM in Action at SMIC Technology Symposium in Shanghai

SHANGHAI - September 11, 2017 - Crossbar Inc., the ReRAM technology leader, has been invited to take part in the 2017 SMIC Technology Symposium in Shanghai on September 13, 2017. Crossbar will present views on the current state of ReRAM technology and targeted applications for both embedded and stand-alone non-volatile memory products. Starting its commercialization phase, Crossbar, Inc. will demonstrate several ReRAM chips and development tools for high-capacity low-latency storage. Technical demos with ReRAM products showing massive battery energy savings for IoT and wearables applications will be showcased by Crossbar.

Crossbar will also speak at the Symposium:

Who: Sylvain Dubois, vice-president of Business Development & Marketing of Crossbar

What: ReRAM as eNVM of choice for 40nm and below

When: September 13, 2017, 4:20 p.m.

Where: Shanghai Hall, Kerry Hotel Pudong, Shanghai

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com

Crossbar to Showcase ReRAM in Action at Leading-Edge Embedded NVM Workshop in France

GARDANNE, France - September 21, 2017 - Crossbar Inc., the ReRAM technology leader, announced today that it will be attending the Leading-Edge Embedded NVM Workshop on Sept. 25-27 in Gardanne (Aix en Provence area), France. This workshop is dedicated to embedded non-volatile memories and takes place every two years, organized with the support of the “Ecole Nationale Supérieure des Mines de Saint-Etienne,” a French engineering school.

The aim of the Workshop is to bring together researchers and industries from both sides of the chain around Embedded Non-Volatile Memories: designers and manufacturers on the one hand and contractors and end-users on the other hand. The workshop will cover themes dedicated to embedded non-volatile memories, during a three-day conference program.

Crossbar will be available to meet with customers and will also speak at the Workshop:

Who: Sylvain Dubois, vice-president of Business Development & Marketing of Crossbar

What: “Unleash new system architectures with Crossbar ReRAM for embedded applications and storage class memories”

When: Tuesday, September 26, 2017 at 9 a.m.

Where: Provence Microelectronics Centre, Gardanne

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com

Crossbar to Showcase ReRAM in Action at SMIC Technology Symposium in Beijing

Beijing – October 10, 2017 - Crossbar Inc., the ReRAM technology leader, is exhibiting and presenting at the 2017 SMIC Technology Symposium in Beijing on Oct.12, 2017. Crossbar will present views on the current state of ReRAM technology and targeted applications for both embedded and stand-alone non-volatile memory products. Starting its commercialization phase, Crossbar, Inc. will demonstrate several ReRAM chips and development tools for high-capacity low-latency storage. Crossbar will showcase technical demos with ReRAM products showing massive battery energy savings for IoT and wearables applications.

Crossbar will also speak at the Symposium:

Who: Sylvain Dubois, vice president of Strategic Marketing and Business Development, Crossbar

What: ReRAM as eNVM of choice for 40nm and below

When: Oct. 12, 2017, 4 p.m.

Where: Beijing Tylfull Hotel (3rd floor), West Tucheng Road, Haidian Area, Beijing

About Crossbar, Inc.

Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit www.crossbar-inc.com.


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Crossbar Media Contact:

Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
nicole.conley@taniscomm.com