Jun 08, 2017
Crossbar CEO George Minassian Presents New Class of Non-Volatile Memory at GSA Memory+ Conference
Crossbar CEO George Minassian recently spoke at the Global Semiconductor Association (GSA) Memory+ Conference in Shanghai and unveiled how visionary innovators can rethink the traditional constraints of electronics system design and usher in the next era of the user experience in digital societal transformation - from artificial intelligence, machine learning and neural networks, to distributed data centers, device-less mobile computing, and more.
Oct 12, 2016
Crossbar to Present on System Benefits of 3D ReRAM in Hyperconverged Infrastructure at ARM TechCon
Crossbar Inc., the ReRAM technology leader, announced today that Vice President of Strategic Marketing and Business Development Sylvain Dubois will present at ARM TechCon 2016 at the Santa Clara Convention Center in Santa Clara, CA.
Aug 04, 2016
Crossbar ReRAM for IoT and Data Centers Featured at 2016 Flash Memory Summit in Executive Keynote and Panel Presentations
Crossbar, Inc., the ReRAM technology leader, announced today that its Founder and CEO George Minassian will keynote at the upcoming Flash Memory Summit at the Santa Clara Convention Center in Santa Clara, Calif. Crossbar’s Dr. Wei Lu, Chief Scientist and Co-founder is also featured in a separate session during the event.
Mar 22, 2016
ReRAM Leader Crossbar Enters China Memory Market
Crossbar, Inc., the Resistive RAM (ReRAM) technology leader, today announced entry into the China market and the opening of a new office in Shanghai, China. “China is the fastest growing market for electronics and where the majority of products are manufactured. Our extensive China VC backing and roots, new local presence and leading technology will enable the next wave of electronics innovation in China for consumer, enterprise, mobile, industrial and IoT markets,” said George Minassian, chief executive officer, Crossbar, Inc. “Our recently announced partnership with SMIC will enable the creation of new applications to take advantage of our embedded technology on SMIC’s 40nm process and beyond.”
Mar 11, 2016
SMIC and ReRAM Leader Crossbar Announce Strategic Partnership Agreement
Semiconductor Manufacturing International Corporation, China’s largest and most advanced semiconductor foundry and one of the world’s largest foundries, and Crossbar, Inc., the ReRAM (Resistive Random Access Memory) technology leader, jointly announced today that they had signed a strategic partnership agreement on non-volatile ReRAM development and production. As part of the partnership, SMIC and Crossbar have signed an agreement to provide ReRAM blocks based on SMIC’ 40nm CMOS manufacturing process. This will enable customers to integrate low latency, very high performance and low power embedded ReRAM memory blocks into MCUs and SoCs, targeting the Internet of Things, wearable and tablet computers, consumer, industrial and automotive electronics markets.
Sep 14, 2015
Crossbar Closes Series D Funding of $35 Million
Crossbar, Inc., the Resistive RAM (ReRAM) technology leader, today announced it has completed a $35 million Series D funding round. Tyche Partners, Oriza Holdings and Cheerful Link joined all of Crossbar’s existing investors in the round, bringing total investment to $85 million to date. Crossbar plans to use the funds to continue the commercial ramp of its game-changing non-volatile (NVM) memory technology.
Dec 15, 2014
Crossbar Unveils Another Breakthrough Innovation Behind its Ultra-High Density 3D ReRAM Solutions at IEDM 2014
Achieving another major milestone needed to bring terabyte storage-on-a-chip to market, Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM) non-volatile technology, today disclosed it has solved one of the greatest challenges facing developers in achieving ultra-high density ReRAM. In a technical presentation at today’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, the company unveiled its approach to suppressing the sneak path current that interferes with reliable reading of data from individual memory cells, one of the most challenging hurdles ReRAM developers are currently facing. Without the ability to suppress this sneak path current, ReRAM developers are unable to deliver the high-density 3D memories arrays needed to make terabyte storage-on-a-chip possible.
Dec 08, 2014
Crossbar to Demonstrate Breakthrough Resistive ReRAM Innovation at IEDM 2014
Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (ReRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its ReRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using Crossbar’s patented “1TnR” technology for read/write operations in June 2014.
Jul 29, 2014
Crossbar ReRAM Technology to be Featured at Flash Memory Summit 2014
Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, will feature its ReRAM technology across three panel presentations during next week’s Flash Memory Summit 2014 at the Santa Clara Convention Center in Santa Clara, CA. Presentations will cover new developments in ReRAM technology as well as the applicability of ReRAM to new markets including the Internet of Things. In addition, Crossbar will discuss developments in 3D NAND and how ReRAM breaks through the barriers in scaling 3D Flash to high densities in high volume.
Jun 30, 2014
Crossbar Unveils Major Technical Innovation Behind Terabyte Storage-on-a-Chip
Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM) technology, today disclosed further details behind its revolutionary non-volatile ReRAM technology. The company announced it has demonstrated pre-production 1MB arrays using its patented “1TnR” (1 Transistor driving n Resistive memory cells) selectivity for read/write operations, representing a critical milestone toward commercializing terabyte scale memory arrays on a postage stamp size chip.
Jun 16, 2014
Crossbar, Inc. Names Ron Richter VP of Sales
Crossbar, Inc., a start-up pioneering Resistive RAM (ReRAM) technology, today announced that semiconductor industry veteran Ron Richter joined the company as vice president of sales. Heading up Crossbar’s new sales organization, Richter will be responsible for driving the company’s global sales strategy and organization as it readies its technology to go to market.
Mar 31, 2014
Crossbar Closes Series C Funding of $25M; Oversubscribed Round Validates Company's Readiness to Scale
Crossbar, Inc., a start-up company pioneering Resistive RAM (ReRAM) technology, today announced it has completed a $25 million Series C funding in an oversubscribed round. Participating in the round were Crossbar’s existing investors Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital and the University of Michigan. In addition, new investors included SAIF Partners, Korea Investment Partners, CBC-Capital and Nick and Joby Pritzker through their family’s firm, Tao Invest, validating the mass-market opportunity and global appeal of the Crossbar technology.
Aug 13, 2013
Crossbar to Present Newly-Unveiled ReRAM Technology at Flash Memory Summit 2013
Speaking at an industry conference for the first time, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (ReRAM)-based technology, creating a new generation of non-volatile memory. Crossbar’s ReRAM is capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs.
Aug 02, 2013
Crossbar Emerges from Stealth-Mode; Unveils Crossbar ReRAM Non-Volatile Memory Technology
Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (ReRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Crossbar today also announced it has developed a working Crossbar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.