Dec 15, 2014
CrossBar Unveils Another Breakthrough Innovation Behind its Ultra-High Density 3D ReRAM Solutions at IEDM 2014
Achieving another major milestone needed to bring terabyte storage-on-a-chip to market, CrossBar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM) non-volatile technology, today disclosed it has solved one of the greatest challenges facing developers in achieving ultra-high density ReRAM. In a technical presentation at today’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, the company unveiled its approach to suppressing the sneak path current that interferes with reliable reading of data from individual memory cells, one of the most challenging hurdles ReRAM developers are currently facing. Without the ability to suppress this sneak path current, ReRAM developers are unable to deliver the high-density 3D memories arrays needed to make terabyte storage-on-a-chip possible.