Press Releases

CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, will feature its ReRAM technology across three panel presentations during next week’s Flash Memory Summit 2014 at the Santa Clara Convention Center in Santa Clara, CA. Presentations will cover new developments in ReRAM technology as well as the applicability of ReRAM to new markets including the Internet of Things. In addition, CrossBar will discuss developments in 3D NAND and how ReRAM breaks through the barriers in scaling 3D Flash to high densities in high volume.

CrossBar, Inc., a start-up company pioneering Resistive RAM (ReRAM) technology, today announced it has completed a $25 million Series C funding in an oversubscribed round. Participating in the round were CrossBar’s existing investors Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital and the University of Michigan. In addition, new investors included SAIF Partners, Korea Investment Partners, CBC-Capital and Nick and Joby Pritzker through their family’s firm, Tao Invest, validating the mass-market opportunity and global appeal of the CrossBar technology.

Speaking at an industry conference for the first time, CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (ReRAM)-based technology, creating a new generation of non-volatile memory. CrossBar’s ReRAM is capable of storing up to one terabyte (TB) of data on a single 200mm² chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs.

Emerging from stealth-mode today, CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its CrossBar Resistive RAM (ReRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm² chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. CrossBar today also announced it has developed a working CrossBar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.