Some of the biggest semiconductor companies in the world are in a race to build a new generation of memory chips, and the stakes couldn’t be higher.

CrossBar expects they should be able to scale up to terabits per die. If they are right, this could be a real game-changer for non-volatile memory, both in embedded and mass storage applications.

CrossBar has been developing a non-volatile RAM technology based on the anti-fuse behavior of amorphous silicon that it calls resistive RAM (ReRAM). That development is now paying off, according to company vice president Sylvain Dubois, with the technology reaching commercialization.

Semiconductor Engineering takes a look at the status of the new memory types including CrossBar ReRAM.

EE Times has selected 25 startup companies for version 17.1 of its list of 60 firms that they feel are worth keeping an eye on. The selection is based on the consideration of a mix of criteria including: technology, intended market, financial position and investment profile, maturity and executive leadership.

Contributed Article by CrossBar’s Sylvain Dubois

ReRAM can be manufactured with the same CMOS process node in the same manufacturing foundry used today by logic circuitry. This manufacturing convergence, together with other unique features of ReRAM technology, is making 3D monolithic integration of massive amounts of storage-class memory and logic circuitry possible for the first time.

Contributed Article by CrossBar’s George Minassian

ReRAM solutions can enable radical innovations in the connected IoT device world.

While MONOS is looking to provide a better version of flash, other companies are looking to develop alternatives. One is CrossBar, which is backing resistive RAM (ReRAM).

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM), they are not alone in bringing new NVM tech to market. CrossBar is another promising technology.

SMIC is to manufacture CrossBar’s Resistive Random Access Memory (ReRAM) for embedded applications like MCUs.

CrossBar Inc., a developer of resistive random access memory (ReRAM) technology, will provide China’s leading silicon foundry with blocks of intellectual property to license to customers under the terms of a strategic partnership.

CrossBar’s Sundar Narayanan examines the advantages inherent in resistive memory technology over current NAND technology in taking 3D memory on a familiar and reasonable cost curve to 8-nm technology nodes.

CrossBar’s Sundar Narayanan look at the challenges that need to be overcome in manufacturing 3D stackable memory using today’s competing technology approaches.

CrossBar raised $35 million in Series D funding this week as it ramps up sales of chips it says could disrupt the $60 billion flash memory market. The Santa Clara company, led by co-founder and CEO George Minassian, says it can fit a terabyte of data on a postage stamp-sized chip that is 20 times faster than the best flash memory.

The selection of the 60 companies in the latest Silicon 60 is based on a mix of criteria including: technology, intended market, financial position, investment profile, maturity and executive leadership. They are emerging companies to follow.

However sometime in the 2020s it will be. What then?